In this study high-speed oxide-confined VCSELs were
fabricated and characterized.
Complete fabrication processes for top-emitting self-
aligned and non-self-aligned 850nm
and 980nm high-speed VCSELs were developed. A
complete fabrication process for
bottom-emitting, non-self-aligned, flip-chip bonded
980nm high-speed VCSELs was
developed. Some of the critical fabrication steps
that affect the VCSEL's speed were
examined. The effect of a heat-sinking layer on the
performance of high-speed VCSELs
was demonstrated for 850nm and 980nm devices. To
further improve the understanding of current high-
speed VCSEL performance restrictions, the effect of
external heating on the VCSEL's resonance frequency
and damping factor was examined for top-emitting,
self-aligned 980nm VCSELs. Furthermore, as the
contacts of the self-aligned VCSELs go through
annealing, etching, and oxidation, experiments on
metal systems used were performed. To better model
the high-speed devices, the dielectric properties of
four different spin-on dielectrics were
investigated.