Novel Three-state Quantum Dot Gate Field Effect Transistor
Fabrication, Modeling and Applications
Wersja papierowa
Autor:
Karmakar Supriya
Wydawnictwo:
Springer Nature B.V.ISBN: 978-81-322-3490-6
Format: 15.6x23.4cm
Liczba stron: 150
Oprawa: Miękka
Wydanie: 2016 r.
Język: angielski
Dostępność: dostępny
446,10 zł
<p>The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.</p><p>