This book focuses on the growth of high quality free
standing single crystal diamond. It is appropriate
for those who are working or interested to work on
the field of epitaxial diamond growth, either by
heteroepitaxy or homoepitaxy. It should be
beneficial to others working in similar fields.

The growth process is very well described using
schematics and tables. Emphasis is given on the
growth of pure and defects free crystals, since
they are important in diamond electronics.

In heteroepitaxy, first the role of negative
biasing of the substrate is discussed in great
detail then a two step process used to grow free
standing diamond crystals approaching the quality of
type IIa natural diamond is explained.

In homoepitaxy, process to grow thick diamond
crystals better than type IIa natural diamonds is
described. Effects of growth parameters on different
kind of defects are explained. A growth regime is
found where diamond can be grown with no nitrogen -
vacancy and other defects.